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參數(shù)資料
| 型號(hào)： | MTP3055 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
| 中文描述： | ? -通道60V的- 0.1ohm - 12A條，220 STripFET MOSFET的 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 160K |
| 代理商： | MTP3055 |
5
Motorola TMOS Power MOSFET Transistor Device Data
V
V
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
0.50
0.60
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.70
0.80
1.0
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
I
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
RG, GATE RESISTANCE (OHMS)
1
10
100
t
VDD = 30 V
ID = 12 A
VGS = 10 V
TJ = 25
°
C
tf
td(off)
VGS = 0 V
TJ = 25
°
C
Figure 10. Stored Charge
0
QT, TOTAL CHARGE (nC)
2
4
6
8
13
ID = 12 A
TJ = 25
°
C
VGS
0
6
8
10
12
1000
100
10
1
10
6
2
0
12
8
4
60
50
40
30
20
10
0
VDS
1
3
5
7
9
4
0.55
0.65
0.75
0.85
0.90
2
0.95
QT
Q1
Q2
Q3
11
10
12
td(on)
tr
0
4
12
IS, SOURCE CURRENT (AMPS)
Q
dIS/dt = 100 A/
μ
s
VDD = 25 V
TJ = 25
°
C
0.08
0.10
0.11
0.12
0.13
0.09
2
6
8
10
Figure 11. Diode Forward Voltage versus Current
μ
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain–to–source voltage and
drain current that a transistor can handle safely when it is for-
ward biased. Curves are based upon maximum peak junc-
tion temperature and a case temperature (TC) of 25
°
C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance–General
Data and Its Use.”
Switching between the off–state and the on–state may tra-
verse any load line provided neither rated peak current (IDM)
nor rated voltage (VDSS) is exceeded and the transition time
(tr,tf) do not exceed 10
μ
s. In addition the total power aver-
aged over a complete switching cycle must not exceed
(TJ(MAX) – TC)/(R
θ
JC).
A Power MOSFET designated E–FET can be safely used
in switching circuits with unclamped inductive loads. For reli-
able operation, the stored energy from circuit inductance dis-
sipated in the transistor while in avalanche must be less than
the rated limit and adjusted for operating conditions differing
from those specified. Although industry practice is to rate in
terms of energy, avalanche energy capability is not a
constant. The energy rating decreases non–linearly with an
increase of peak current in avalanche and peak junction tem-
perature.
Although many E–FETs can withstand the stress of drain–
to–source avalanche at currents up to rated pulsed current
(IDM), the energy rating is specified at rated continuous cur-
rent (ID), in accordance with industry custom. The energy rat-
ing must be derated for temperature as shown in the
accompanying graph (Figure 13). Maximum energy at cur-
rents below rated continuous ID can safely be assumed to
equal the values indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP3055E | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
| MTP3055V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
| MTP3055VL | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM |
| MTP3055VL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| MTP30N06VL | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP3055A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB |
| MTP3055E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220 |
| MTP3055EL | 制造商:ON Semiconductor 功能描述:TMOS IV N-CHANNEL ENHANCEMENT-MODE |
| MTP3055V | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP3055V | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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