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參數(shù)資料
| 型號(hào)： | MTP3055 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
| 中文描述： | ? -通道60V的- 0.1ohm - 12A條，220 STripFET MOSFET的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 160K |
| 代理商： | MTP3055 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
—
—
65
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.7
5.4
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 6.0 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 150
°
C)
RDS(on)
VDS(on)
—
0.10
0.15
Ohm
—
—
1.3
—
2.2
1.9
Vdc
Forward Transconductance (VDS = 7.0 Vdc, ID = 6.0 Adc)
gFS
4.0
5.0
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
410
500
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
130
180
Reverse Transfer Capacitance
—
25
50
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
RG = 9.1
)
td(on)
tr
td(off)
tf
—
7.0
10
ns
Rise Time
(VDD = 30 Vdc, ID = 12 Adc,
VGS = 10 Vdc,
—
34
60
Turn–Off Delay Time
—
17
30
Fall Time
—
18
50
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
12.2
17
nC
(VDS = 48 Vdc, ID = 12 Adc,
—
3.2
—
—
5.2
—
—
5.5
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150
°
C)
VSD
—
—
1.0
0.91
1.6
—
Vdc
Reverse Recovery Time
(See Figure 15)
dIS/dt = 100 A/
μ
s)
trr
ta
—
56
—
ns
(IS = 12 Adc, VGS = 0 Vdc,
—
40
—
tb
—
16
—
Reverse Recovery Stored Charge
QRR
—
0.128
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
3.5
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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|---|---|
| MTP3055E | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
| MTP3055V | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP3055A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB |
| MTP3055E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220 |
| MTP3055EL | 制造商:ON Semiconductor 功能描述:TMOS IV N-CHANNEL ENHANCEMENT-MODE |
| MTP3055V | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP3055V | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
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