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參數(shù)資料
| 型號(hào)： | MTD1302 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 20 AMPERES 30 VOLTS |
| 中文描述： | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 205K |
| 代理商： | MTD1302 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
IDSS
—
—
—
—
10
100
μ
Adc
Gate–Body Leakage Current
(VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
1.5
2.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
—
—
0.019
0.026
0.022
0.029
Ohms
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150
°
C)
VDS(on)
—
—
0.38
—
0.5
0.33
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 10 Adc)
gFS
10
16
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
755
1162
pF
Output Capacitance
—
370
518
Transfer Capacitance
—
102
204
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
td(on)
tr
td(off)
tf
QT
Q1
—
7.2
15
ns
Rise Time
—
52
104
Turn–Off Delay Time
—
45
90
Fall Time
)
—
73
146
Gate Charge
(VDS = 24 Vdc,D
(DS
VGS = 5.0 Vdc)
—
14.5
21.8
nC
—
2.2
—
,
Q2
Q3
QT
Q1
Q2
Q3
—
8.8
—
—
6.8
—
Gate Charge
(VDS = 24 Vdc,D
(DS
VGS = 10 Vdc)
—
27
40.5
nC
—
2.2
—
,
—
10
—
—
7.2
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.83
0.79
1.1
—
Vdc
Reverse Recovery Time
(IS = 20 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
38
—
ns
—
19
—
,
—
20
—
Reverse Recovery Stored Charge
QRR
—
36
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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