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參數(shù)資料
| 型號： | MTB55N06Z |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 55 AMPERES 60 VOLTS |
| 中文描述： | 55 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MTB55N06Z |
4
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Capacitance Variation
Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
25
–10
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4000
3200
1600
2400
QG, TOTAL GATE CHARGE (nC)
24
40
0
8.0
4.0
2.0
0
100
1.0
RG, GATE RESISTANCE (OHMS)
1000
100
10
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
0.54
0.5
30
20
10
0
0.58
1.0
10
0.1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
100
10
1.0
0.1
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
50
25
500
400
300
100
0
125
C
V
t
I
800
0
–5.0
0
5.0
15
20
28
32
4.0
8.0
12
16
20
6.0
10
12
10
0.62 0.66 0.70 0.74
0.94
,
I
100
75
100
150
200
E
36
,
G
TJ = 25
°
C
ID = 30 A
VDD = 30 V
VGS = 10 V
0.78 0.82 0.86 0.90
TJ = 25
°
C
VGS = 0 V
A
ID = 30 A
TJ = 25
°
C
Ciss
Coss
Crss
Ciss
Crss
VDS = 0 V
VGS = 0 V
VGS
VDS
32
16
8.0
0
24
40
48
V
,
D
TJ = 25
°
C
ID = 30 A
VDS
VGS
QT
Q3
Q2
Q1
td(on)
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LMIT
100 s
10 s
1.0 ms
10 ms
dc
td(off)
tr
tf
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