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參數(shù)資料
| 型號： | MTB55N06Z |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 55 AMPERES 60 VOLTS |
| 中文描述： | 55 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 146K |
| 代理商： | MTB55N06Z |
3
Motorola TMOS Power MOSFET Transistor Device Data
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage Current
versus Voltage
3.0
4.5
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
60
40
20
50
10
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
4.4
6.4
2.0
40
20
10
0
60
10
ID, DRAIN CURRENT (AMPS)
24
20
16
12
8.0
ID, DRAIN CURRENT (AMPS)
20
10
15.0
14.6
14.2
13.8
13.4
13.0
30
–25
25
–50
TJ, JUNCTION TEMPERATURE (
°
C)
1.8
1.4
1.2
1.0
0.8
0.6
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
50
0
1000
100
10
1.0
0.1
0.01
0
I
I
D
R
0
1.5
0.5
1.0
2.0
2.5
3.5
4.0
4.8
5.2
2.4
2.8
3.2
3.6
4.0
30
50
60
20
30
40
50
40
50
60
,
R
50
150
75
1.6
20
60
30
40
I
5.0
30
5.6
6.0
,
VDS
≥
10 V
,
D
VGS = 10 V
R
,
D
100
125
VGS = 10 V
ID = 15 A
VGS = 0 V
VGS = 4.0 V
TJ = 25
°
C
5.0 V
6.0 V
10 V
9.0 V
8.0 V
7.0 V
TJ = –55
°
C
100
°
C
25
°
C
TJ = 100
°
C
–55
°
C
25
°
C
VGS = 10 V
TJ = 25
°
C
15 V
TJ = 25
°
C
100
°
C
125
°
C
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