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參數(shù)資料
| 型號(hào)： | MTB40N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 40 AMPERES 100 VOLTS |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 192K |
| 代理商： | MTB40N10E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0
0.5
1
1.5
2.0
2.5
3
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (
°
C)
P
Figure 15. D2PAK Power Derating Curve
R
θ
JA = 50
°
C/W
Board material = 0.065 mil FR–4
Mounted on the minimum recommended footprint
Collector/Drain Pad Size
≈
450 mils x 350 mils
100 s
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
0.1
1.0
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 s
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
ID = 40 A
100
150
t, TIME (seconds)
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1000
1.0
0
800
600
500
400
700
100
10
300
200
100
0.01
0.1
1.0
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
1.0 ms
10 ms
dc
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.0
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