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參數(shù)資料
| 型號(hào)： | MTB40N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 40 AMPERES 100 VOLTS |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 192K |
| 代理商： | MTB40N10E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (
°
C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
0
1
2
3
4
5
6
7
8
9
10
20
10
40
30
60
50
80
70
0
VGS = 10 V
TJ = 25
°
C
2
3
4
5
6
7
8
20
10
40
30
60
50
80
70
0
0
10
20
30
40
50
60
70
80
0.02
0.01
0.04
0.03
0.06
0.05
0.07
0
VGS = 10 V
TJ = 100
°
C
0
10
20
30
40
50
60
70
80
0.020
0.015
0.030
0.025
0.010
VGS = 10 V
TJ = 25
°
C
0.040
0.035
0.050
0.045
–50
–25
0
25
50
75
100
125
150
0.4
0.2
0.8
0.6
1.2
1.0
2.0
1.4
0
VGS = 10 V
ID = 20 A
1.6
1.8
0
10
20
30
40
60
70
80
100
10
100
1000
1.0
VGS = 0 V
50
90
8 V
9 V
7 V
6 V
5 V
VDS
≥
10 V
100
°
C
25
°
C
TJ = –55
°
C
25
°
C
–55
°
C
15 V
100
°
C
TJ = 125
°
C
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