參數(shù)資料
型號: MTB3N100E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 3.0 AMPERES 1000 VOLTS
中文描述: 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 3/10頁
文件大?。?/td> 262K
代理商: MTB3N100E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
4
8
12
16
20
2
6
10
14
18
3
5 V
6 V
VDS
10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
TJ = –55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 10 V
15 V
2.8
3.4
VGS = 0 V
0
200
400
1
100
100000
100
300
600
500
25
°
C
100
°
C
TJ = 125
°
C
1.0
3.0
5.5
1
3
5
6
4
2
4.5
25
°
C
–55
°
C
VGS = 10 V
–50
0.4
0.8
1.2
2.0
2.4
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 1.5 A
4 V
5
1
1000
3.2
3.6
3.8
3.0
1.6
6
2
4
ID
5.6
2.0
4.0
6.0
5.0
10
1000
800
0
1.0
3.0
5.0
2.0
4.0
6.0
5.5
3
5
1
6
2
4
0
6.0
2.5
1.5
3.5
1.5
2.5
3.5
4.5
700
900
10000
VGS = 10 V
TJ = 100
°
C
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