- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371150 > MTB29N15E (MOTOROLA INC) TMOS POWER FET 29 AMPERES 150 VOLTS PDF資料下載
參數(shù)資料
| 型號： | MTB29N15E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 29 AMPERES 150 VOLTS |
| 中文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 76K |
| 代理商： | MTB29N15E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
150
—
—
TBD
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
—
2.7
TBD
4.0
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 14.5 Adc)
RDS(on)
—
0.055
0.07
Ohms
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 29 Adc)
(ID = 14.5 Adc, TJ = 125
°
C)
VDS(on)
—
—
—
—
2.4
2.1
Vdc
Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc)
gFS
10
18
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
—
2250
3150
pF
Output Capacitance
—
455
910
Transfer Capacitance
Crss
—
133
190
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 75 Vd
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
I
29 Ad
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
17.5
40
ns
Rise Time
—
108
220
Turn–Off Delay Time
—
90
180
Fall Time
)
—
85
170
Gate Charge
(VDS = 120 Vdc,D
(DS
VGS = 10 Vdc)
—
78
110
nC
—
12
—
,
—
37
—
—
23
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 29 Adc, VGS = 0 Vdc)
(IS = 29 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.92
TBD
1.3
—
Vdc
Reverse Recovery Time
(IS = 29 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
174
—
ns
—
140
—
,
—
34
—
Reverse Recovery Stored Charge
QRR
—
1.4
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTB2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS |
| MTB3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
| MTB3N120E | TMOS POWER FET 3.0 AMPERES 1200 VOLTS |
| MTB40N10E | TMOS POWER FET 40 AMPERES 100 VOLTS |
| MTB55N06Z | TMOS POWER FET 55 AMPERES 60 VOLTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB29N15ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB2-9PH001 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PH001 - Bulk |
| MTB2-9PL1 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PL1 - Bulk |
| MTB2-9PL2 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PL2 - Bulk |
| MTB2-9PS-01 | 制造商:ITT Interconnect Solutions 功能描述:MTB2-9PS-01 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復。