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參數(shù)資料
| 型號： | MTB29N15E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 29 AMPERES 150 VOLTS |
| 中文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 76K |
| 代理商： | MTB29N15E |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
150
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–to–Source
Voltage
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
150
Vdc
±
20
±
40
Vdc
Vpk
29
19
102
Adc
Apk
125
1.0
2.5
Watts
W/
°
C
Watts
TJ, Tstg
EAS
– 55 to 150
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (1)
421
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.0
62.5
50
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
260
°
C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MTB29N15E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
29 AMPERES
150 VOLTS
RDS(on) = 0.07 OHM
CASE 418B–03, Style 2
D2PAK
D
S
G
N–Channel
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