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參數(shù)資料
| 型號： | MTB1N100E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 1.0 AMPERES 1000 VOLTS |
| 中文描述： | 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 256K |
| 代理商： | MTB1N100E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
1000
—
—
1.251
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
—
6.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
6.7
9.0
Ohm
—
—
4.86
—
9.0
10.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc)
gFS
0.9
1.32
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
587
810
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
—
59.6
120
Reverse Transfer Capacitance
—
12.2
25
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
)
RG = 9.1
td(on)
tr
td(off)
tf
—
9.0
20
ns
Rise Time
(VDD = 500 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc,
—
12
25
Turn–Off Delay Time
—
28
50
Fall Time
—
34
70
Gate Charge
(See Figure 8)
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
14.6
20
nC
(VDS = 400 Vdc, ID = 1.0 Adc,
—
2.8
—
—
6.8
—
—
5.2
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
0.764
0.62
1.0
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
—
655
—
ns
(IS = 1.0 Adc, VGS = 0 Vdc,
ta
tb
—
42
—
—
613
—
Reverse Recovery Stored Charge
QRR
—
0.957
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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