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參數(shù)資料
| 型號： | MT6L61AT |
| 廠商： | Toshiba Corporation |
| 英文描述： | SILICON NPN EPITAXIAL PLANAR TYPE |
| 中文描述： | 硅型瑞展 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 83K |
| 代理商： | MT6L61AT |
MT6L61AT
2002-01-18
2
Electrical Characteristics Q1-Side
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
5 V, I
E
0
0.1
A
Emitter cut-off current
I
EBO
V
EB
1 V, I
C
0
1
A
DC current gain
h
FE
V
CE
1 V, I
C
5 mA
70
140
Transition frequency
f
T
V
CE
3 V, I
C
10 mA
10
12
GHz
S
21e
2
(1)
V
CE
1 V, I
C
5 mA, f 2 GHz
6.5
Insertion gain
S
21e
2
(2)
V
CE
3 V, I
C
15 mA, f 2 GHz
4
7
dB
NF (1)
V
CE
1 V, I
C
5 mA, f 2 GHz
1.6
3
Noise figure
NF (2)
V
CE
3 V, I
C
5 mA, f 2 GHz
1.5
3
dB
Reverse transfer capacitance
C
re
V
CB
1 V, I
E
0, f 1 MHz
(Note2)
0.45
0.85
pF
Electrical Characteristics Q2-Side
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
5 V, I
E
0
0.1
A
Emitter cut-off current
I
EBO
V
EB
1 V, I
C
0
1
A
DC current gain
h
FE
V
CE
1 V, I
C
5 mA
80
160
f
T
(1)
V
CE
1 V, I
C
5 mA
2
4.5
Transition frequency
f
T
(2)
V
CE
3 V, I
C
7 mA
5
7
GHz
S
21e
2
(1)
V
CE
1 V, I
C
5 mA, f 1 GHz
8.5
Insertion gain
S
21e
2
(2)
V
CE
3 V, I
C
20 mA, f 1 GHz
7.5
11
dB
NF (1)
V
CE
1 V, I
C
5 mA, f 1 GHz
1.3
2.2
Noise figure
NF (2)
V
CE
3 V, I
C
7 mA, f 1 GHz
1.2
2
dB
Reverse transfer capacitance
C
re
V
CB
1 V, I
E
0, f 1 MHz
(Note2)
0.9
1.25
pF
Note2: C
re
is measured by 3 terminal method with capacitance bridge.
Marking
Pin Assignment
(top view)
Caution
This device electrostatic sensitivity. Please handle with caution.
B1
B2
C1
E1
C2
Q1
Q2
E2
T E
4
6
3
1
2
5
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