參數(shù)資料
型號： MT46V64M8TG-75Z
廠商： Micron Technology, Inc.
英文描述： DOUBLE DATA RATE DDR SDRAM
中文描述： 雙倍數(shù)據(jù)速率的DDR SDRAM內(nèi)存
文件頁數(shù)： 43/68頁
文件大小： 2555K
代理商： MT46V64M8TG-75Z
43
512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_B.p65
–
Rev. B; Pub 4/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
512Mb: x4, x8, x16
DDR SDRAM
ADVANCE
ABSOLUTE MAXIMUM RATINGS*
V
DD
Supply Voltage Relative to V
SS
.............-1V to +3.6V
V
DD
Q Supply Voltage Relative to V
SS
..........-1V to +3.6V
V
REF
and Inputs Voltage Relative to V
SS
........-1V to +3.6V
I/O Pins Voltage Relative to V
SS
........-0.5V to V
DD
Q +0.5V
Operating Temperature, T
A
(ambient)....0°C to +70°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
Short Circuit Output Current.................................50mA
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1
–
5, 16; notes appear on pages 50
–
53) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V)
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
SYMBOL
V
DD
V
DD
Q
MIN
2.3
2.3
MAX
2.7
2.7
UNITS NOTES
V
V
36, 41
36, 41,
44
6, 44
7, 44
28
28
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
≤
V
IN
≤
V
DD
, V
REF
pin 0V
≤
V
IN
≤
1.35V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
≤
V
OUT
≤
V
DD
Q)
OUTPUT LEVELS: Full drive option - x4, x8, x16
High Current (V
OUT
= V
DD
Q-0.373V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.373V, maximum V
REF
, maximum V
TT
)
OUTPUT LEVELS: Reduced drive option - x16 only
High Current (V
OUT
= V
DD
Q-0.763V, minimum V
REF
, minimum V
TT
)
Low Current (V
OUT
= 0.763V, maximum V
REF
, maximum V
TT
)
V
REF
V
TT
V
IH
(
DC
)
V
IL
(
DC
)
0.49
x
V
DD
Q
V
REF
- 0.04
V
REF
+ 0.15
-0.3
0.51
x
V
DD
Q
V
REF
+ 0.04
V
DD
+ 0.3
V
REF
- 0.15
V
V
V
V
I
I
-2
2
μA
I
OZ
-5
5
μA
I
OH
I
OL
-16.8
16.8
–
–
mA
mA
37, 39
I
OHR
I
OLR
-9
9
–
–
mA
mA
38, 39
AC INPUT OPERATING CONDITIONS
(Notes: 1
–
5, 14, 16; notes appear on pages 50
–
53) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
= +2.5V ±0.2V, V
DD
Q = +2.5V ±0.2V)
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
SYMBOL
V
IH
(
AC
)
V
IL
(
AC
)
V
REF
(
AC
)
MIN
MAX
–
UNITS
V
V
V
NOTES
14, 28, 40
14, 28, 40
6
V
REF
+ 0.310
–
0.49 x V
DD
Q
V
REF
- 0.310
0.51 x V
DD
Q
相關PDF資料
PDF描述
MT46V64M8TG-75ZL DOUBLE DATA RATE DDR SDRAM
MT46V64M8TG-8 DOUBLE DATA RATE DDR SDRAM
MT46V64M8TG-8L DOUBLE DATA RATE DDR SDRAM
MT48LC16M8A2 SYNCHRONOUS DRAM
MT48LC2M32B2 SYNCHRONOUS DRAM
相關代理商/技術參數(shù)
參數(shù)描述
MT46V64M8TG-75ZL 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
MT46V64M8TG-8 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
MT46V64M8TG-8L 制造商:MICRON 制造商全稱:Micron Technology 功能描述:DOUBLE DATA RATE DDR SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*