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49
512Mb: x4, x8, x16 DDR SDRAM
512Mx4x8x16DDR_B.p65
–
Rev. B; Pub 4/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
512Mb: x4, x8, x16
DDR SDRAM
ADVANCE
SLEW RATE DERATING VALUES
(Note: 14; notes appear on pages 50
–
53) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V)
ADDRESS / COMMAND
t
IS
1
1.05
1.10
1.15
1.1
1.15
1.20
1.25
SPEED
-75Z, -75
-75Z, -75
-75Z, -75
-75Z, -75
-8
-8
-8
-8
SLEW RATE
0.500V / ns
0.400V / ns
0.300V / ns
0.200V / ns
0.500V / ns
0.400V / ns
0.300V / ns
0.200V / ns
t
IH
1
1
1
1
1.1
1.1
1.1
1.1
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
SLEW RATE DERATING VALUES
(Note: 31; notes appear on pages 50
–
53) (0
°
C
≤
T
A
≤
+70
°
C; V
DD
Q = +2.5V ±0.2V, V
DD
= +2.5V ±0.2V)
DQ, DM, DQS
t
DS
0.50
0.55
0.60
0.65
0.60
0.65
0.70
0.75
SPEED
-75Z, -75
-75Z, -75
-75Z, -75
-75Z, -75
-8
-8
-8
-8
SLEW RATE
0.500V / ns
0.400V / ns
0.300V / ns
0.200V / ns
0.500V / ns
0.400V / ns
0.300V / ns
0.200V / ns
t
0.50
0.55
0.60
0.65
0.60
0.65
0.70
0.75
UNITS
ns
ns
ns
ns
ns
ns
ns
ns