參數(shù)資料
型號: MT3S19R
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: SOT23F, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 161K
代理商: MT3S19R
MT3S19R
2010-08-18
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S19R
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
FEATURES
Low Noise Figure:NF=1.5dB(Typ.) (@ f=1GHz)
High Gain:|S21e|2=13dB(Typ.) (@ f=1GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
12
V
Collector-emitter voltage
VCEO
6
V
Emitter-base voltage
VEBO
2
V
Collector-current
IC
80
mA
Base-current
IB
10
mA
Collector power dissipation
PC(Note1)
320
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: The device is mounted on a FR4 board (20 mm x 25 mm x 1.55 mm (t))
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
0.17
+0.08
-0.07
2.9±0.2
0.95
0.42
+0.08
-0.05
1.
8±0.
1
2.
4±0.
1
2
3
A
0.05 M A
+0
.0
8
-0
.0
5
0.
8
SOT23F
JEDEC
JEITA
TOSHIBA
Weight: 11 mg (typ.)
1.
Base
2.
Emitter
3.
Collector
T 6
1
2
3
相關(guān)PDF資料
PDF描述
MT3S19 VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
MT3S20P UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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MT4S101T UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
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