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參數(shù)資料
| 型號(hào)： | MT3S20P |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PW-MINI, 2-5K1A, SC-62, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 178K |
| 代理商： | MT3S20P |
MT3S20P
2009-12-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S20P
VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications
FEATURES
Low Noise Figure: NF=1.45dB(Typ.) (@f=1GHz)
High Gain: |S21e|2=11dB(Typ.) (@f=1GHz)
Marking
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
80
mA
Base current
IB
10
mA
Collector power dissipation
PC
400
mW
Collector power dissipation
PC(Note1)
1.8
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note.1 : The device is mounted on a ceramic board (25mm X 25mm X 0.8 mm (t))
Note.2 : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
PW-Mini
JEDEC
-
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (Typ.)
M U
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