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參數(shù)資料
| 型號： | MT4S23U |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | USQ, 2-2K1A, 4 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 184K |
| 代理商： | MT4S23U |
MT4S23U
2010-06-02
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT4S23U
VHF~UHF Band Low Noise Amplifier Applications
Low Noise Figure: NF = 1.4dB (Typ.) (@f = 2 GHz)
High Gain: |S21e|2 = 12dB (Typ.) (@f = 2 GHz)
Compatible with 2SC5319
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
8
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
V
Collector current
IC
40
mA
Base current
IB
10
mA
Collector power dissipation
PC(Note.1)
170
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note.1: The device is mounted on a FR4 board (500 mm
2 x 1.55 mm (t))
Note.2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Unit: mm
1.Emitter1(E1)
2.Collector(C)
3.Emitter2(E2)
4.Base(B)
USQ
JEDEC
―
JEITA
―
TOSHIBA
2-2K1A
Weight: 6 mg (typ.)
Type Name
Ｍ
Ｔ
4
3
1
2
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