參數(shù)資料
型號: MSC8252SVT1000B
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 數(shù)字信號處理
英文描述: 0-BIT, OTHER DSP, PBGA783
封裝: 29 X 29 MM, LEAD FREE, PLASTIC, FCBGA-783
文件頁數(shù): 18/68頁
文件大?。?/td> 912K
代理商: MSC8252SVT1000B
Electrical Characteristics
MSC8252 Dual-Core Digital Signal Processor Data Sheet, Rev. 5
Freescale Semiconductor
25
2.4
CLKIN Requirements
Table 5 summarizes the required characteristics for the CLKIN signal.
This section describes the DC electrical characteristics for the MSC8252.
2.5.1
DDR SDRAM DC Electrical Characteristics
This section describes the DC electrical specifications for the DDR SDRAM interface of the MSC8252.
Note:
DDR2 SDRAM uses VDDDDR(typ) = 1.8 V and DDR3 SDRAM uses VDDDDR(typ) = 1.5 V.
2.5.1.1
DDR2 (1.8 V) SDRAM DC Electrical Characteristics
Table 6 provides the recommended operating conditions for the DDR SDRAM controller when interfacing to DDR2 SDRAM.
Note:
At recommended operating conditions (see Table 3) with VDDDDR =1.8 V.
Table 5. CLKIN Requirements
Parameter/Condition1
Symbol
Min
Typ
Max
Unit
Notes
CLKIN duty cycle
40
60
%
2
CLKIN slew rate
1
4
V/ns
3
CLKIN peak period jitter
±150
ps
CLKIN jitter phase noise at –56 dBc
500
KHz
4
AC input swing limits
ΔVAC
1.5
V
Input capacitance
CIN
——
15
pf
Notes:
1.
For clock frequencies, see the Clock chapter in the MSC8252 Reference Manual.
2.
Measured at the rising edge and/or the falling edge at VDDIO/2.
3.
Slew rate as measured from ±20% to 80% of voltage swing at clock input.
4.
Phase noise is calculated as FFT of TIE jitter.
Table 6. DDR2 SDRAM Interface DC Electrical Characteristics
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O reference voltage
MVREF
0.49
× VDDDDR
0.51
× VDDDDR
V2, 3, 4
Input high voltage
VIH
MVREF + 0.125
VDDDDR +0.3
V
5
Input low voltage
VIL
–0.3
MVREF – 0.125
V
5
I/O leakage current
IOZ
–50
50
μA6
Output high current (VOUT (VOH) = 1.37 V)
IOH
–13.4
mA
7
Output low current (VOUT (VOL) = 0.33 V)
IOL
13.4
mA
7
Notes:
1.
VDDDDR is expected to be within 50 mV of the DRAM VDD supply voltage at all times. The DRAM and memory controller can
use the same or different sources.
2.
MVREF is expected to be equal to 0.5 × VDDDDR, and to track VDDDDR DC variations as measured at the receiver.
Peak-to-peak noise on MVREF may not exceed ±2% of the DC value.
3.
VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal
to MVREF with a minimum value of MVREF – 0.4 and a maximum value of MVREF + 0.04 V. VTT should track variations in the
DC-level of MVREF.
4.
The voltage regulator for MVREF must be able to supply up to 300 μA.
5.
Input capacitance load for DQ, DQS, and DQS signals are available in the IBIS models.
6.
Output leakage is measured with all outputs are disabled, 0 V
V
OUT
V
DDDDR.
7.
Refer to the IBIS model for the complete output IV curve characteristics.
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