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參數(shù)資料
| 型號(hào)： | MMBT1010LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, CASE 318D-04, 3 PIN |
| 文件頁數(shù)： | 1/21頁 |
| 文件大?。?/td> | 292K |
| 代理商： | MMBT1010LT3 |
2–300
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Low Saturation Voltage
PNP Silicon Driver Transistors
Part of the GreenLine
Portfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy
in general purpose driver applications. This device is housed in the SOT-23 and
SC–59 packages which are designed for low power surface mount
applications.
Low VCE(sat), < 0.1 V at 50 mA
Applications
LCD Backlight Driver
Annunciator Driver
General Output Device Driver
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
45
Vdc
Collector-Emitter Voltage
V(BR)CEO
15
Vdc
Emitter-Base Voltage
V(BR)EBO
5.0
Vdc
Collector Current — Continuous
IC
100
mAdc
DEVICE MARKING
MMBT1010LT1 = GLP
MSD1010T1 = GLP
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
TA = 25°C
Derate above 25
°C
PD(1)
250
1.8
mW
mW/
°C
Thermal Resistance Junction to Ambient
R
θJA
556
°C/W
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
– 55 ~ + 150
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Condition
Min
Max
Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA, IB = 0
15
—
Vdc
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 10 A, IE = 0
5.0
—
Vdc
Collector-Base Cutoff Current
ICBO
VCB = 20 V, IE = 0
—
0.1
A
Collector-Emitter Cutoff Current
ICEO
VCE = 10 V, IB = 0
—
100
A
DC Current Gain
hFE1(2)
VCE = 5 V, IC = 100 mA
300
600
—
Collector-Emitter Saturation Voltage
VCE(sat)(2)
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 100 mA, IB = 10 mA
—
0.1
0.19
Vdc
Base-Emitter Saturation Voltage
VBE(sat)(2)
IC = 100 mA, IB = 10 mA
—
1.1
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width
≤ 300 s, D.C. ≤ 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBT1010LT1
MSD1010T1
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
CASE 318–08, STYLE 6
SOT-23
Motorola Preferred Devices
COLLECTOR
BASE
EMITTER
CASE 318D–04, STYLE 1
SC-59
1
2
3
2
1
3
REV 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT1010T1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT |
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| MMBT1015_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015-BL-AC3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
| MMBT1015-BL-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW FREQUENCY PNP AMPLIFIER TRANSISTOR |
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