參數(shù)資料
型號(hào)： MSD1328-RT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SC-59, 3 PIN
文件頁數(shù)： 1/32頁
文件大?。?/td> 288K
代理商： MSD1328-RT3
2–727
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN LowVoltage Output
Amplifier Surface Mount
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector–Base Voltage
V(BR)CBO
25
Vdc
Collector–Emitter Voltage
V(BR)CEO
20
Vdc
Emitter–Base Voltage
V(BR)EBO
12
Vdc
Collector Current — Continuous
IC
500
mAdc
Collector Current — Peak
IC(P)
1000
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
– 55 ~ +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
20
—
Vdc
Collector–Base Breakdown Voltage
(IC = 10 Adc, IE = 0)
V(BR)CBO
25
—
Vdc
Emitter–Base Breakdown Voltage
(IE = 10 Adc, IE = 0)
V(BR)EBO
12
—
Vdc
Collector–Base Cutoff Current
(VCB = 25 Vdc, IE = 0)
ICBO
—
0.1
Adc
DC Current Gain(1)
(VCE = 2.0 Vdc, IC = 500 mAdc)
hFE
200
350
—
Collector–Emitter Saturation Voltage (IC = 500 mAdc, IB = 20 mAdc)
VCE(sat)
—
0.4
Vdc
Base–Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
—
1.2
Vdc
1. Pulse Test: Pulse Width
≤ 300 s, D.C. ≤ 2%.
DEVICE MARKING
Marking Symbol
1
X
DR
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MSD1328-RT1
Motorola Preferred Device
CASE 318D–03, STYLE 1
SC–59
2
1
3
COLLECTOR
3
2
BASE
1
EMITTER
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