參數(shù)資料
型號(hào)： MSC8154ETVT1000B
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 數(shù)字信號(hào)處理
英文描述： 0-BIT, OTHER DSP, PBGA783
封裝： 29 X 29 MM, LEAD FREE, PLASTIC, FCBGA-783
文件頁(yè)數(shù)： 19/68頁(yè)
文件大?。?/td> 912K
代理商： MSC8154ETVT1000B
MSC8154E Quad-Core Digital Signal Processor with Security Data Sheet, Rev. 2
Electrical Characteristics
Freescale Semiconductor
26
This section describes the DC electrical characteristics for the MSC8154E.
2.5.1
DDR SDRAM DC Electrical Characteristics
This section describes the DC electrical specifications for the DDR SDRAM interface of the MSC8154E.
Note:
DDR2 SDRAM uses VDDDDR(typ) = 1.8 V and DDR3 SDRAM uses VDDDDR(typ) = 1.5 V.
2.5.1.1
DDR2 (1.8 V) SDRAM DC Electrical Characteristics
Table 6 provides the recommended operating conditions for the DDR SDRAM controller when interfacing to DDR2 SDRAM.
Note:
At recommended operating conditions (see Table 3) with VDDDDR =1.8 V.
Table 6. DDR2 SDRAM Interface DC Electrical Characteristics
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O reference voltage
MVREF
0.49
× VDDDDR
0.51
× VDDDDR
V2, 3, 4
Input high voltage
VIH
MVREF + 0.125
VDDDDR +0.3
V
5
Input low voltage
VIL
–0.3
MVREF – 0.125
V
5
I/O leakage current
IOZ
–50
50
μA6
Output high current (VOUT (VOH) = 1.37 V)
IOH
–13.4
—
mA
7
Output low current (VOUT (VOL) = 0.33 V)
IOL
13.4
—
mA
7
Notes:
1.
VDDDDR is expected to be within 50 mV of the DRAM VDD supply voltage at all times. The DRAM and memory controller can
use the same or different sources.
2.
MVREF is expected to be equal to 0.5 × VDDDDR and to track VDDDDR DC variations as measured at the receiver. Peak-to-peak
noise on MVREF may not exceed ±2% of the DC value.
3.
VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be equal
to MVREF with a minimum value of MVREF – 0.4 and a maximum value of MVREF + 0.04 V. VTT should track variations in the
DC-level of MVREF.
4.
The voltage regulator for MVREF must be able to supply up to 300 μA.
5.
Input capacitance load for DQ, DQS, and DQS signals are available in the IBIS models.
6.
Output leakage is measured with all outputs are disabled, 0 V
≤ V
OUT
≤ V
DDDDR.
7.
Refer to the IBIS model for the complete output IV curve characteristics.
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