參數(shù)資料
型號: MRFIC1819
廠商: Motorola, Inc.
英文描述: RF Power Amplifiers(RF功率放大器)
中文描述: 射頻功率放大器(射頻功率放大器)
文件頁數(shù): 10/11頁
文件大?。?/td> 164K
代理商: MRFIC1819
MRFIC1819
10
MOTOROLA WIRELESS SEMICONDUCTOR
SOLUTIONS – RF AND IF DEVICE DATA
15
Figure 15. Temperature Stability of the Open
Loop Control
–5.0
0
10
30
40
–15
–5.0
VDD (dBv)
0
5.0
15
–20
Pin = 6.0 dBm
f = 1750 MHz
TA = –40
°
C
25
°
C
85
°
C
P
25
–10
10
5.0
20
35
Figure 16. Timing Guide
OpAmp
shdn
Tx En
(&RF In)
Vramp
3.0 V
0 V
3.0 V
0 V
2.0 V
0 V
20
μ
s
2.0
μ
s
Burst mode
Use Figure 16 as a guide line to perform burst mode
measurements with the complete application circuit of
Figure 2. Notice that the VSC pin is connected to Vramp
(through a resistor) and acts as a pull down when negative
voltage is missing so that drain voltage is not applied to the
RF line–up.
– Bursting the OpAmp with its Pin 8 (shdn) is not mandatory
during a call as the OpAmp current consumption is very small
(1.0 to 2mA). This pin is mainly used for the idle mode of the
radio. In any case, the wake–up time of the OpAmp is very
short.
– Vramp can be applied soon after Tx EN since the internal
negative voltage generator settles in less than 2.0
μ
s.
– Tx EN signal can be used to switch the input power (using
a driver or attenuator) in order to provide higher isolation for
on/off burst dynamic.
References (Motorola application notes)
AN1599 – Power Control with the MRFIC0913 GaAs
Integrated Power Amplifier and MC33169 Support IC.
AN1602 – 3.6 V and 4.8 V GSM/DCS1800 Dual Band PA
Application with DECT capability Using Standard Motorola
RFIC’s.
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