參數資料
型號: MRFIC0913
廠商: MOTOROLA INC
元件分類: 衰減器
英文描述: 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
中文描述: 880 MHz - 915 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
文件頁數: 7/8頁
文件大小: 140K
代理商: MRFIC0913
7
MRFIC0913
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 978–02
ISSUE A
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
MIN
2.000
0.025
1.950
6.950
4.372
8.850
6.950
4.372
0.466
0.250 BSC
0.300
0.300
0.180
0.180
0.800 BSC
–––
0
0.200
0.200
0.100
MAX
2.350
0.152
2.100
7.100
5.180
9.150
7.100
5.180
0.720
MILLIMETERS
0.432
0.375
0.279
0.230
0.600
7
aaa
bbb
ccc
NOTES:
1.
2.
CONTROLLING DIMENSION: MILLIMETER.
DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3.
DATUM PLANE –H– IS LOCATED AT BOTTOM
OF LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4.
DIMENSIONS D AND E1 DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE –H–.
5.
DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6.
DATUMS –A– AND –B– TO BE DETERMINED AT
DATUM PLANE –H–.
BOTTOM VIEW
D1
E2
16
9
8
1
e
S
B
M
bbb
C
D
X 45
h
e
1
E1
8X
E
A2
A
SEATING
PLANE
DATUM
PLANE
DETAIL Y
PLANE
L
1.000
0.039
L
W
W
A1
ccc C
DETAIL Y
SECT W–W
c
c1
b1
b
éé
S
A
M
aaa
C
A
B
H
C
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