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參數(shù)資料
| 型號： | MRFIC0913 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 140K |
| 代理商： | MRFIC0913 |
5
MRFIC0913
MOTOROLA RF DEVICE DATA
–1
1
P
Pin, INPUT POWER (dBm)
VD1, VD2, DRAIN VOLTAGE (VOLTS)
P
60
50
20
0
0
6
40
0
2
3
4
6
VD1, VD2, DRAIN VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS
Figure 9. Output Power versus Drain Voltage
Figure 10. Power Added Efficiency versus
Drain Voltage
30
10
0
–10
– 30
36
32
24
20
–7
3
9
13
Figure 11. Output Power versus Input Power
60
30
0
–7
13
Pin, INPUT POWER (WATTS)
Figure 12. Power Added Efficiency versus
Input Power
– 20
1
5
30
40
10
28
50
10
20
40
P
f = 900 MHz
Pin = 10 dBm
VSS = – 4 V
TA = 85
°
and 25
°
C
– 40
°
C
20
2
3
4
1
5
f = 900 MHz
Pin = 10 dBm
VSS = – 4 V
25
°
C
TA = – 40
°
C
P
25
°
C
TA = – 40
°
C
30
22
34
26
– 5
5
7
11
– 3
TA = – 40
°
C
85
°
C
3
9
– 5
5
1
7
11
– 3
85
°
C
85
°
C
–1
25
°
C
f = 900 MHz
VD1 = VD2 = 4.8 V
VSS = – 4 V
f = 900 MHz
VD1 = VD2 = 4.8 V
VSS = – 4 V
f
Zin
Ohms
ZOL*
Ohms
(MHz)
R
jX
R
jX
880
13.65
–44.05
3.15
5.06
885
13.64
–44.74
3.13
4.97
890
13.65
–45.44
3.10
4.89
895
13.64
–46.14
3.08
4.80
900
13.64
–46.84
3.06
4.71
905
13.65
–47.55
3.04
4.63
910
13.66
–48.27
3.02
4.54
915
13.66
–49.00
3.00
4.45
Table 1. Device Impedances Derived from Circuit Characterization
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