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參數(shù)資料
| 型號： | MRFIC0913 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 140K |
| 代理商： | MRFIC0913 |
MRFIC0913
4
MOTOROLA RF DEVICE DATA
P
f, FREQUENCY (MHz)
56
53
52
50
880
915
55
54
51
Pin = 10 dBm
TA = 25
°
C
VSS = – 4 V
895
900
905
890
910
885
P
R
f, FREQUENCY (MHz)
P
f, FREQUENCY (MHz)
58
52
50
46
880
915
34.0
880
895
900
905
915
f, FREQUENCY (MHz)
TYPICAL CHARACTERISTICS
Figure 3. Output Power versus Frequency
Figure 4. Power Added Efficiency
versus Frequency
33.8
33.6
33.4
33.2
33.0
25
°
C
Pin = 10 dBm
VD1 = VD2 = 4 V
VSS = – 4 V
35.6
35.0
34.6
34.4
880
915
Figure 5. Output Power versus Frequency
Figure 6. Power Added Efficiency
versus Frequency
36.8
880
915
f, FREQUENCY (MHz)
P
Figure 7. Output Power versus Frequency
36.4
36.0
35.2
40
880
915
f, FREQNENCY (MHz)
Figure 8. Input Return Loss versus Frequency
30
20
15
TA = – 40
°
C
890
910
56
54
48
35.4
34.8
36.6
36.2
35.6
35
25
85
°
C
P
885
25
°
C
Pin = 10 dBm
VD1 = VD2 = 4.8 V
VSS = – 4 V
TA = – 40
°
C
85
°
C
895
900
905
890
910
885
25
°
C
Pin = 10 dBm
VD1 = VD2 = 4.8 V
VSS = – 4 V
TA = – 40
°
C
85
°
C
35.2
895
900
905
890
910
885
VD1 = VD2 = 5.6 V
4.8 V
895
900
905
890
910
885
25
°
C
Pin = 10 dBm
VD1 = VD2 = 5.6 V
VSS = – 4 V
TA = – 40
°
C
85
°
C
35.8
35.4
895
900
905
890
910
885
25
°
C
85
°
C
4 V
4 V
Pin = 10 dBm
VD1 = VD2 = 4.8 V
VSS = – 4 V
TA = – 40
°
C
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