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參數(shù)資料
| 型號： | MRFG35010ANT1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | Gallium Arsenide PHEMT |
| 中文描述： | 砷化鎵PHEMT器件 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 260K |
| 代理商： | MRFG35010ANT1 |
MRFG35010ANT1
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
Typical Single-Carrier W-CDMA Performance: V
DD
= 12 Volts, I
DQ
=
130 mA, P
out
= 1 Watt Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Efficiency — 25%
ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth
9 Watts P1dB @ 3550 MHz, CW
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
15
Vdc
Gate-Source Voltage
V
GS
-5
Vdc
RF Input Power
P
in
33
dBm
Storage Temperature Range
T
stg
-65 to +150
°
C
Channel Temperature
(1)
T
ch
175
°
C
Operating Case Temperature Range
T
C
-40 to +85
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 77
°
C, 1 W CW
R
θ
JC
6.5
°
C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
°
C
1. For reliable operation, the operating channel temperature should not exceed 150
°
C.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRFG35010AN
Rev. 0, 5/2006
Freescale Semiconductor
Technical Data
3.5 GHz, 9 W, 12 V
POWER FET
GaAs PHEMT
MRFG35010ANT1
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
Freescale Semiconductor, Inc., 2006. All rights reserved.
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| MRFG35010 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35030R5 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFG35010AR1 | 功能描述:射頻GaAs晶體管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| MRFG35010AR5 | 功能描述:射頻GaAs晶體管 3.5GHZ 10W GAAS NI360HF RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| MRFG35010MR5 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Freescale Semiconductor 功能描述: |
| MRFG35010MT1 | 功能描述:MOSFET RF 3.5GHZ 9W 12V 1.5-PLD RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35010N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
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