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參數(shù)資料
| 型號： | MRFG35030R5 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| 中文描述： | 砷化鎵PHEMT的射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 245K |
| 代理商： | MRFG35030R5 |
MRFG35030R5
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL base station applications with frequencies from 3400 to
3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
Class AB applications.
Typical
Single
Carrier W
CDMA Performance: V
DD
=
12
Volts, I
DQ
=
650 mA, P
out
= 3 Watts Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Pro
bability on CCDF.
Power Gain —12 dB
Drain Efficiency — 21%
ACPR @ 5 MHz Offset —
41 dBc @ 3.84 MHz Channel Bandwidth
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Excellent Thermal Stability
In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
79
0.53
W
W/
°
C
Gate
Source Voltage
V
GS
5
Vdc
RF Input Power
P
in
37
dBm
Storage Temperature Range
T
stg
40 to +175
°
C
Channel Temperature
(1)
T
ch
175
°
C
Operating Case Temperature Range
T
C
20 to +90
°
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
1.9
°
C/W
1. For reliable operation, the operating channel temperature should not exceed 150
°
C.
MRFG35030R5
Rev. 2, 3/2005
Freescale Semiconductor
Technical Data
3550 MHz, 30 W, 12 V
SINGLE W
CDMA
POWER FET
GaAs PHEMT
MRFG35030R5
CASE 1490
02, STYLE 1
Freescale Semiconductor, Inc., 2005. All rights reserved.
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