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參數(shù)資料
| 型號： | MRFE6P3300HR3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| 中文描述： | RF功率場效應晶體管N溝道增強型MOSFET的側向 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 430K |
| 代理商： | MRFE6P3300HR3 |
6
RF Device Data
Freescale Semiconductor
MRFE6P3300HR3 MRFE6P3300HR5
TYPICAL NARROWBAND CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
70
10
10
7th Order
P
out
, OUTPUT POWER (WATTS) PEP
3rd Order
20
30
40
50
100
600
I
60
5th Order
1
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
70
10
1
TWOTONE SPACING (MHz)
V
DD
= 32 Vdc, P
out
= 150 W (PEP), I
DQ
= 1600 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 860 MHz
20
30
40
50
10
80
I
Figure 9. Pulsed CW Output Power versus
Input Power
42
63
34
P
in
, INPUT POWER (dBm)
61
59
57
53
36
38
40
Actual
Ideal
32
P
o
,
55
60
58
56
54
33
35
37
39
41
62
P1dB = 55.15 dBm
(327.9 W)
P3dB = 55.9 dBm
(388.37 W)
P6dB = 56.28 dBm
(424.38 W)
A
Figure 10. Single-Carrier DVBT OFDM ACPR, Power
Gain and Drain Efficiency versus Output Power
15
70
P
out
, OUTPUT POWER (WATTS) AVG.
45
25
30
20
30
35
50
10
45
η
D
,
p
,
G
ps
ACPU
V
DD
= 32 Vdc, I
DQ
= 1600 mA, f = 860 MHz
8K Mode OFDM, 64 QAM Data Carrier
Modulation, 5 Symbols
30 C
40
1
200
35
25
40
85 C
25 C
T
C
= 30 C
25 C
η
D
V
DD
= 32 Vdc, I
DQ
= 1600 mA
f1 = 857 MHz, f2 = 863 MHz
TwoTone Measurements, 6 MHz Tone Spacing
60
IM3L
IM3U
IM5L
IM5U
IM7U
IM7L
V
DD
= 32 Vdc, I
DQ
= 1600 mA
Pulsed CW, 12
μ
sec(on), 1% Duty Cycle
f = 860 MHz
10
5
0
65
60
55
100
ACPL
30 C
85 C
25 C
85 C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6P3300HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
| MRFE6P3300HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 900MHZ 300W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6P9220HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S8046GNR1 | 功能描述:射頻MOSFET電源晶體管 HV6E 45W GSM RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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