- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359219 > MRFG35003MT1 (飛思卡爾半導體(中國)有限公司) RF Reference Design Library Gallium Arsenide PHEMT PDF資料下載
參數(shù)資料
| 型號： | MRFG35003MT1 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF Reference Design Library Gallium Arsenide PHEMT |
| 中文描述： | 射頻參考設計庫砷化鎵PHEMT器件 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 107K |
| 代理商： | MRFG35003MT1 |
MRFG35003NT1 MRFG35003MT1 BWA
1
RF Reference Design Data
Freescale Semiconductor
RF Reference Design Library
Gallium Arsenide PHEMT
RF Power Field Effect Transistors
Device Characteristics (From Device Data Sheet)
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class
AB linear base station applications.
Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts,
I
DQ
= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 300 mWatt
Power Gain — 11.5 dB
Efficiency — 25%
3 Watts P1dB @ 3.55 GHz
Excellent Phase Linearity and Group Delay Characteristics
High Gain, High Efficiency and High Linearity
N Suffix Indicates Lead-Free Terminations
Reference Design Characteristics
Typical Single-Channel W-CDMA Performance: -45 dBc ACPR,
2.45 GHz, 12 Volts, I
DQ
= 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH
(8.5 dB P/A @ 0.01% Probability)
Output Power — 350 mWatt
Power Gain — 12.5 dB
Efficiency — 26%
MRFG35003NT1(MT1) BWA 2.4-2.5 GHz REFERENCE DESIGN
Designed by: Monte Miller and Rick Hooper
This reference design is designed to demonstrate the typi-
cal
RF
performance
MRFG35003NT1(MT1) when applied for the 2.4-2.5 GHz
W-CDMA frequency band. The reference design is tuned for
the best tradeoff between good W-CDMA linearity and good
power capability and efficiency.
characteristics
of
the
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design
available for your use in development and testing of your
own product or products, without charge. The reference
design contains easy-to-copy, fully functional amplifier
designs. Where possible, it consists of “no tune” distrib-
uted element matching circuits designed to be as small as
possible, includes temperature compensated bias circuit-
ry, and is designed to be used as “building blocks” for our
customers.
HEATSINKING
When operating this fixture please provide adequate heat-
sinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.
NONLINEAR SIMULATION
To aid the design process and help reduce time to market
for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:
http://www.freescale.com/rf/models
Available at http://www.freescale.com/rf, Go to Tool
s
Rev. 1, 6/2005
Freescale Semiconductor
Technical Data
MRFG35003NT1
MRFG35003MT1
BWA
BWA
2.4-2.5 GHz
RF
OUTPUT
RF
INPUT
MATC
H
MATC
H
B
V
DD
V
GG
B
Freescale Semiconductor, Inc., 2005. All rights reserved.
相關PDF資料 |
PDF描述 |
|---|---|
| MRFG35005MT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35005NT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010ANT1 | Gallium Arsenide PHEMT |
| MRFG35010AR1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor |
| MRFG35010N | RF Power Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRFG35003N6AT1 | 功能描述:射頻GaAs晶體管 3.5GHZ 3W 6V GAAS PLD1.5 RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| MRFG35003N6T1 | 功能描述:MOSFET RF 3.5GHZ 3W 6V 1.5-PLD RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35003NR5 | 功能描述:TRANSISTOR RF 3W 12V POWER FET RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35003NT1 | 功能描述:MOSFET RF 3.5GHZ 3W 12V 1.5-PLD RoHS:是 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRFG35005ANT1 | 功能描述:射頻GaAs晶體管 3.5GHZ 4.5W GAAS PLD1.5 RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
發(fā)布緊急采購，3分鐘左右您將得到回復。