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參數(shù)資料
| 型號： | MRF9120LR3 |
| 廠商： | Motorola, Inc. |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應晶體管 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 316K |
| 代理商： | MRF9120LR3 |
F
Freescale Semiconductor, Inc.
MRF9120R3 MRF9120LR3
2
MOTOROLA RF DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μ
Adc)
V
GS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 450 mAdc)
V
GS(Q)
—
3.8
—
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1.3 Adc)
V
DS(on)
—
0.17
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 4 Adc)
g
fs
—
5.3
—
S
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
50
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2
—
pF
(1) Each side of device measured separately.
(continued)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF9120LR5 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9120R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LSR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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