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參數(shù)資料
| 型號： | MRF9120 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-860, CASE 375B-04, 5 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 316K |
| 代理商： | MRF9120 |
F
Freescale Semiconductor, Inc.
MRF9120R3 MRF9120LR3
MOTOROLA RF DEVICE DATA
3
For More Information On This Product,
Go to: www.freescale.com
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system)
(2)
Two-Tone Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
G
ps
15
16.5
—
dB
Two-Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
39
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
—
-16
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
G
ps
—
16.5
—
dB
Two-Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IMD
—
-30
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 120 W PEP, I
DQ
= 2 x 500 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IRL
—
-13
—
dB
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz)
P
1dB
—
120
—
W
Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz)
G
ps
—
16
—
dB
Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f1 = 880.0 MHz)
η
—
51
—
%
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 120 W CW, I
DQ
= 2 x 500 mA,
f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
(2) Device measured in push-pull configuration.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF9120LR3 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9120LR5 | 功能描述:射頻MOSFET電源晶體管 120W 880MHZ NI860L FET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9120R3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130L | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
| MRF9130LR3 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF Power Field Effect Transistors |
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