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參數(shù)資料
| 型號： | MRF9045LR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 231K |
| 代理商： | MRF9045LR1 |
MRF9045LR1 MRF9045LSR1
5
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two
Tone Common
Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
17
18.8
—
dB
Two
Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
42
—
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
32
28
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
14
9
dB
Two
Tone Common
Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
G
ps
—
18.5
—
dB
Two
Tone Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41
—
%
3rd Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
33
—
dBc
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 45 W PEP, I
DQ
= 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
13
—
dB
Power Output, 1 dB Compression Point
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
P
1dB
—
55
—
W
Common
Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
G
ps
—
18
—
dB
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f1 = 945.0 MHz)
η
—
60
—
%
Output Mismatch Stress
(V
DD
= 28 Vdc, P
out
= 45 W CW, I
DQ
= 350 mA,
f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency
of Tests)
Ψ
No Degradation In Output Power
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MRF9045LR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9045LR5 | 功能描述:射頻MOSFET電源晶體管 45W 945MHZ LDMOS NI360L RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9045LSR1 | 功能描述:射頻MOSFET電源晶體管 45W 945MHZ LDMOS NI360S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9045LSR5 | 功能描述:射頻MOSFET電源晶體管 45W RF PWR LDMOS NI360S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9045M | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
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