參數(shù)資料
型號(hào)： MRF7S38010H
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
中文描述： 射頻功率場(chǎng)效應(yīng)晶體管N溝道增強(qiáng)型MOSFET的外側(cè)
文件頁(yè)數(shù)： 3/15頁(yè)
文件大?。?/td> 528K
代理商： MRF7S38010H
MRF7S38010HR3 MRF7S38010HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 160 mA, P
out
= 2
W Avg.,
f = 3400
MHz and f = 3600
MHz, WiMAX Signal, OFDM Single-Carrier, 7 MHz Channel Bandwidth, 64 QAM
3
/
4
, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ P
out
= 2
W Avg.
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Mask
—
—
—
—
—
-26
-38
-43
-60
-60
—
—
—
—
—
dBc
Relative Constellation Error @ P
out
= 2 W Avg.
(1)
Error Vector Magnitude
(1)
(Typical EVM Performance @ P
out
= 2
W Avg. with OFDM 802.16d
Signal Call)
RCE
—
-33
—
dB
EVM
—
2.3
—
% rms
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 30 Vdc, I
DQ
= 160 mA, 3400-3600 MHz Bandwidth
Video Bandwidth @ 12 W PEP P
out
where IM3 = -30 dBc
(Tone Spacing from 100 kHz to VBW)
Δ
IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
20
—
MHz
Gain Flatness in 200 MHz Bandwidth @ P
out
= 2 W Avg.
G
F
—
1.04
—
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 10
W CW
Φ
—
2.22
—
°
Average Group Delay @ P
out
= 10
W CW, f = 3500 MHz
Delay
—
1.88
—
ns
Part-to-Part Insertion Phase Variation @ P
out
= 10 W CW,
f = 3500 MHz, Six Sigma Window
ΔΦ
—
25.9
—
°
Gain Variation over Temperature
(-30
°
C to +85
°
C)
Δ
G
—
0.025
—
dB/
°
C
Output Power Variation over Temperature
(-30
°
C to +85
°
C)
Δ
P1dB
—
0.246
—
dBm/
°
C
1. RLE = 20Log(EVM/100)
相關(guān)PDF資料
PDF描述
MRF9002NR2 RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET
MRF9030MR1_07 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF9030MR1 RF Power Field Effect Transistors
MRF9045LR1 RF Power Field Effect Transistors
MRF9060LR1 RF Power Field Effect Transistors N&#8722;Channel Enhancement&#8722;Mode Lateral MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF7S38010HR3 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38010HR5 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38010HSR3 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38010HSR5 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF7S38040HR3 功能描述:射頻MOSFET電源晶體管 3600MHZ 8W 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*