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參數(shù)資料
| 型號： | MRF7S35120HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 732K |
| 代理商： | MRF7S35120HSR3 |
MRF7S35120HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
35
0.1
1000
020
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C,
CA
PA
CIT
ANCE
(pF
)
30
Ciss
1
100
1
TC =25°C
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
I D
,DRA
IN
CURRE
NT
(A
M
PS
)
10
1
Coss
Crss
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0 Vdc
100
TJ = 200°C
TJ = 150°C
TJ = 175°C
13
3
5
10
12
11
50
41
32
23
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
,P
OWER
GAIN
(d
B)
η
D,
DRA
IN
EF
FI
CIE
NCY
(%
)
8
200
48
56
36
55
54
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
53
52
51
50
38
39
40
41
42
45
P out
,O
UT
PU
T
POWER
(d
Bm)
PU
LSED
P3dB = 52 dBm (157 W)
Actual
Ideal
P2dB = 51.7 dBm (149 W)
8
14
1
13
12
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
,P
OWER
GAIN
(d
B)
10
11
IDQ = 1000 mA
200
150 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
,P
OWER
GAIN
(d
B)
VDD =24 V
6
13
3
7
12
26 V
11
10
200
49
10
9
500 mA
300 mA
10
9
8
VDD =32 Vdc,IDQ = 150 mA
Pulse Width = 100 μsec
Duty Cycle = 20%
IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
VDD =32 Vdc,IDQ = 150 mA, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
VDD = 32 Vdc, f = 3500 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
100
525
15
9
100
14
Gps
f = 3500 MHz
ηD
3300 MHz
3100 MHz
37
43
44
P1dB = 51.3 dBm (135 W)
100
28 V
30 V
32 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S35120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S38010HR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010HSR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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