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參數(shù)資料
| 型號： | MRF7S35120HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 732K |
| 代理商： | MRF7S35120HSR3 |
2
RF Device Data
Freescale Semiconductor
MRF7S35120HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =32 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID = 400 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDD =32 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.4
3
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =2.0 Adc)
VDS(on)
0.1
0.17
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
0.87
—
pF
Output Capacitance
(VDS =32 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
464
—
pF
Input Capacitance
(VDS =32 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
214
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =32 Vdc, IDQ = 150 mA, Pout = 120 W Peak (24 W Avg.), f = 3100 MHz
and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, <25 ns Input Rise Time
Power Gain
Gps
10.5
12
13.5
dB
Drain Efficiency
ηD
38
40
—
%
Input Return Loss
IRL
—
--15
--8
dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) VDD =32 Vdc, IDQ = 150 mA, Pout = 120 W Peak
(24 W Avg.), f = 3100 MHz and f = 3500 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, <25 ns Input Rise Time
Output Pulse Droop
(500 μsec Pulse Width, 10% Duty Cycle)
DRPout
—
0.3
—
dB
Load Mismatch Tolerance
(VSWR = 10:1 at all Phase Angles)
VSWR--T
No Degradation in Output Power
1. Part internally matched both on input and output.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S35120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 120W PULSED RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010H | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S38010HR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010HR5 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V NI400 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S38010HSR3 | 功能描述:射頻MOSFET電源晶體管 3600MHZ 2W 30V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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