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參數(shù)資料
| 型號： | MRF7S21080HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF Power Field Effect Transistors |
| 中文描述： | 射頻功率場效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 428K |
| 代理商： | MRF7S21080HR3 |
4
RF Device Data
Freescale Semiconductor
MRF7S21080HR3 MRF7S21080HSR3
Figure 1. MRF7S21080HR3(HSR3) Test Circuit Schematic
Z10*
Z11*
Z12*
Z13
Z14*
Z15, Z16*
PCB
0.457
″
x 0.083
″
Microstrip
0.118
″
x 0.083
″
Microstrip
0.206
″
x 0.083
″
Microstrip
0.301
″
x 0.083
″
Microstrip
1.220
″
x 0.080
″
Microstrip
0.720
″
x 0.080
″
Microstrip
Taconic TLX8-0300, 0.030
″
,
ε
r
= 2.55
* Variable for tuning
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7
Z8
Z9*
0.325
″
x 0.083
″
Microstrip
0.921
″
x 0.083
″
Microstrip
0.126
″
x 0.083
″
Microstrip
0.645
″
x 0.083
″
Microstrip
0.275
″
x 0.669
″
Microstrip
0.114
″
x 0.764
″
Microstrip
0.374
″
x 0.764
″
Microstrip
0.180
″
x 0.524
″
Microstrip
0.075
″
x 0.083
″
Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C4
C3
R1
Z1
Z2
Z3
Z4
C1
Z10
R2
Z14
Z5
Z11
Z12
Z13
C9
Z6
Z15
C10
C13
C16
Z16
C14
C15
+
C12
C11
C5
R3
C2
C17
C8
C7
C6
Z8
Z7
Z9
Table 5. MRF7S21080HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C3, C9, C10, C11
6.8 pF Chip Capacitors
C2
0.5 pF Chip Capacitor
C4
220 nF Chip Capacitor
C5, C12, C13, C14, C15
10
μ
F, 50 V Chip Capacitors
C6
1.5 pF Chip Capacitor
C7, C8, C17
0.2 pF Chip Capacitors
C16
220
μ
F, 63 V Electrolytic Capacitor, Radial
R1, R2
2 K
Ω
, 1/4 W Chip Resistors
R3
10
Ω
, 1/4 W Chip Resistor
Description
Part Number
Manufacturer
ATC
ATC
AVX
TDK
ATC
ATC
Vishay
Vishay
Vishay
ATC100B6R8BT500XT
ATC100B0R5BT500XT
18125C224KAT1A
C5750X5R1H106M
ATC100B1R5BT500XT
ATC100B0R2BT500XT
222213668221
CRCW12062001FKEA
CRCW120610R0FKEA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21080HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HSR3 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ 22W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HR3 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S21110HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 33W WCDMA NH780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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