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參數(shù)資料
| 型號： | MRF7S19080HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 639K |
| 代理商： | MRF7S19080HSR3 |
12
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
TYPICAL CHARACTERISTICS
60
0
Pout, OUTPUT POWER (WATTS) AVG.
30
24
35
20
40
12
03
9
8
55
Figure 19. 3-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
AL
T/ACPR
(dBc)
45
50
1
4
AdjU
η
D
,DRAIN
EFFICIENCY
(%)
ηD
3Carrier TDSCDMA
VDD = 28 V, IDQ = 750 mA
f = 2017.5 MHz
AltU
AltL
26
45
7
8
16
AdjL
60
0
Pout, OUTPUT POWER (WATTS) AVG.
30
24
40
16
12
0.5
8
55
Figure 20. 6-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
45
50
1.5
4
AdjL
η
D
,DRAIN
EFFICIENCY
(%)
ηD
6Carrier TDSCDMA
VDD = 28 V, IDQ = 750 mA
f = 2017.5 MHz
AltU
AltL
AL
T/ACPR
(dBc)
AdjU
2.5
3.5
4.5
5.5
6.5
7.5
45
20
TD-SCDMA TEST SIGNAL
80
130
30
(dBm)
40
50
60
70
90
100
110
120
1.5 MHz
Center 2.0175 GHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 21. 3-Carrier TD-SCDMA Spectrum
1.28 MHz
Channel BW
80
130
30
(dBm)
40
50
60
70
90
100
110
120
2.5 MHz
Center 2.0175 GHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 22. 6-Carrier TD-SCDMA Spectrum
1.28 MHz
Channel BW
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
ALT1 in
1.28 MHz BW
1.6 MHz Offset
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
ALT1 in
1.28 MHz BW
1.6 MHz Offset
ALT2 in
1.28 MHz BW
3.2 MHz Offset
ALT2 in
1.28 MHz BW
3.2 MHz Offset
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S19080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NBR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19120NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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