參數(shù)資料
型號(hào)： MRF7S19080HSR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN
文件頁(yè)數(shù)： 14/16頁(yè)
文件大?。?/td> 639K
代理商： MRF7S19080HSR3
MRF7S19080HR3 MRF7S19080HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
70
10
1
100
40
50
10
30
20
60
7th Order
5th Order
3rd Order
400
VDD = 28 Vdc, IDQ = 750 mA
f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
TWOTONE SPACING (MHz)
10
60
0
VDD = 28 Vdc, Pout = 80 W (PEP), IDQ = 750 mA
TwoTone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
IM3U
10
20
40
1
100
IMD,
INTERMODULA
TION
DIST
ORTION
(dBc)
50
30
IM3L
IM5U
IM5L
IM7L
IM7U
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
1
3
5
30
Actual
Ideal
0
2
4
OUTPUT
COMPRESSION
A
T
THE
0.01%
PROBABILITY
ON
CCDF
(dB)
20
40
50
60
30
60
55
50
45
40
35
η
D,
DRAIN
EFFICIENCY
(%)
VDD = 28 Vdc, IDQ = 750 mA
f = 1960 MHz, Input PAR = 7.5 dB
1 dB = 23 W
2 dB = 32.2 W
10
3 dB = 52.4 W
Figure 10. Digital Predistortion Correction versus
ACPR and Output Power
Pout, OUTPUT POWER (dBm)
ACPR,
UPPER
AND
LOWER
RESUL
TS
(dBc)
Uncorrected, Upper and Lower
DPD Corrected
No Memory Correction
DPD Corrected, with Memory Correction
VDD = 28 Vdc, IDQ = 750 mA, f = 1960 MHz
SingleCarrier WCDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
300
14
20
0
66
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 750 mA
f = 1960 MHz
TC = 30_C
25
_C
85
_C
30
_C
25
_C
85
_C
10
1
19
18
17
16
15
55
44
33
22
11
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
100
70
20
34
40
50
60
35
36
37
38
39
40
41
42
43
44
30
0.1
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