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參數(shù)資料
| 型號： | MRF7S19080HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數(shù)： | 13/16頁 |
| 文件大小： | 639K |
| 代理商： | MRF7S19080HSR3 |
6
RF Device Data
Freescale Semiconductor
MRF7S19080HR3 MRF7S19080HSR3
TYPICAL CHARACTERISTICS
2080
1880
1920
1960
2000
G
ps
,POWER
GAIN
(dB)
2040
1880
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 24 Watts Avg.
1920
11
19
18
17
16
15
14
13
12
1.4
38
36
34
32
30
0.8
1
1.2
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
30
10
15
20
25
η
D
,DRAIN
EFFICIENCY
(%)
1960
G
ps
,POWER
GAIN
(dB)
IRL
Gps
f, FREQUENCY (MHz)
Figure 4. Output Peak-to-Average Ratio Compression (PARC)
Broadband Performance @ Pout = 49 Watts Avg.
11
19
18
17
16
15
14
13
12
3.2
50
48
46
44
42
2.6
2.8
3
ηD
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dB)
30
10
15
20
25
η
D
,DRAIN
EFFICIENCY
(%)
Figure 5. Two-Tone Power Gain versus
Output Power
100
14
20
1
IDQ = 1125 mA
937.5 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
375 mA
18
17
16
10
200
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10
IDQ = 375 mA
Pout, OUTPUT POWER (WATTS) PEP
10
20
30
40
100
70
50
VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz
TwoTone Measurements, 10 MHz Tone Spacing
1
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
PARC
19
750 mA
200
2000
VDD = 28 Vdc, Pout = 24 W (Avg.)
IDQ = 750 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
2040
VDD = 28 Vdc, Pout = 49 W (Avg.)
IDQ = 750 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
562.5 mA
60
937.5 mA
750 mA
562.5 mA
1125 mA
15
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| MRF7S19080HSR5 | 功能描述:射頻MOSFET電源晶體管 HV7 1.9GHZ 28V RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NBR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 29W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF7S19100NR1_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S19120NR1 | 功能描述:射頻MOSFET電源晶體管 1990MHZ 36W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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