參數(shù)資料
型號(hào)： MRF6VP121KHSR6
廠商： FREESCALE SEMICONDUCTOR INC
元件分類(lèi)： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN
文件頁(yè)數(shù)： 12/20頁(yè)
文件大?。?/td> 1167K
代理商： MRF6VP121KHSR6
2
RF Device Data
Freescale Semiconductor
MRF6VP121KHR6 MRF6VP121KHSR6
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 67°C, 1000 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle,
50 Vdc, IDQ = 150 mA
Case Temperature 62°C, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, IDQ = 150 mA
ZθJC
0.02
0.07
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (3)
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
10
μAdc
Drain--Source Breakdown Voltage
(VGS =0 Vdc, ID = 165 mA)
V(BR)DSS
110
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
100
μAdc
On Characteristics
Gate Threshold Voltage (3)
(VDS =10 Vdc, ID = 1000 μAdc)
VGS(th)
0.9
1.6
2.4
Vdc
Gate Quiescent Voltage (4)
(VDD =50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3
Vdc
Drain--Source On--Voltage (3)
(VGS =10 Vdc, ID =2.7 Adc)
VDS(on)
—
0.15
—
Vdc
Dynamic Characteristics (3)
Reverse Transfer Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
1.27
—
pF
Output Capacitance
(VDS =50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
86.7
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
539
—
pF
Functional Tests (4) (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (100 W Avg.),
f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Gps
19
20
22
dB
Drain Efficiency
ηD
54
56
—
%
Input Return Loss
IRL
—
--23
--9
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
(continued)
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