參數(shù)資料
型號(hào)： MRF6VP121KHSR6
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： L BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CASE 375E-04, NI-1230S, 4 PIN
文件頁(yè)數(shù)： 11/20頁(yè)
文件大?。?/td> 1167K
代理商： MRF6VP121KHSR6
MRF6VP121KHR6 MRF6VP121KHSR6
19
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2009
Initial Release of Data Sheet
1
June 2009
Added Pulsed RF Performance tables for 785 MHz and 1090 MHz applications, p. 3
Added Figs. 13 and 16, Test Circuit Component Layout -- 785 MHz and 1090 MHz, and Tables 6 and 7, Test
Circuit Component Designations and Values -- 785 MHz and 1090 MHz, p. 9, 12
Added Figs. 14 and 17, Pulsed Power Gain and Drain Efficiency versus Output Power -- 785 MHz and
1090 MHz, p. 10, 13
Added Figs. 15 and 18, Series Equivalent Source and Load Impedance -- 785 MHz and 1090 MHz, p. 11, 14
2
Dec. 2009
Added thermal data for 1030 MHz Mode--S application to Table 2, Thermal Characteristics, reporting of
pulsed thermal data now shown using the ZθJC symbol,p.2
Added Typical Performances table for 1030 MHz Mode--S application, p. 3
Added Fig. 12, MTTF versus Junction Temperature -- 1030 MHz Mode--S, p. 7
3
Apr. 2010
Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
相關(guān)PDF資料
PDF描述
MRF6VP21KHR6 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6VP2600HR6 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6VP3091NR1 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6VP3091NBR1 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6VP3091NR5 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF6VP21KHR5 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP21KHR6 功能描述:射頻MOSFET電源晶體管 VHV6 225MHZ 1000W NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6VP21KHR6_10 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600H 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
MRF6VP2600HR5 功能描述:射頻MOSFET電源晶體管 VHV6 600W 225MHZ NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*