參數(shù)資料
型號(hào): MRF6S9045MBR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
封裝: PLASTIC, CASE-1337-03, 2 PIN
文件頁(yè)數(shù): 15/16頁(yè)
文件大?。?/td> 642K
代理商: MRF6S9045MBR1
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
8
RF Device Data
Freescale Semiconductor
MRF6S9045MR1 MRF6S9045MBR1
TYPICAL CHARACTERISTICS
100
24
1
0
80
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 350 mA
f = 880 MHz
TC = 30_C
30
_C
85
_C
10
23
22
20
18
70
60
50
40
30
20
η
D,
DRAIN
EFFICIENCY
(%)
Gps
ηD
G
ps
,POWER
GAIN
(dB)
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 12 V
16 V
G
ps
,POWER
GAIN
(dB)
100
17.5
23.5
080
20
23
21
20.5
20
19.5
19
40
60
22
21.5
22.5
IDQ = 350 mA
f = 880 MHz
21
19
17
16
10
25
_C
10
18.5
18
30
50
70
90
20 V
24 V
28 V
32 V
85
_C
25
_C
210
109
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than
±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
106
MTTF
FACT
OR
(HOURS
X
AMPS
2 )
90
110
130
150
170
190
Figure 13. MTTF Factor versus Junction Temperature
100
120
140
160
180
200
相關(guān)PDF資料
PDF描述
MRF6S9045MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S9045NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S9060MBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
MRF6S9060MR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
MRF6S9060NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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