- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359218 > MRF6S27085HR3 (飛思卡爾半導(dǎo)體(中國(guó))有限公司) N-Channel Enhancement-Mode Lateral MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | MRF6S27085HR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | N溝道增強(qiáng)型MOSFET的外側(cè) |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 358K |
| 代理商： | MRF6S27085HR3 |
6
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
TYPICAL CHARACTERISTICS
70
30
40
45
50
60
35
55
65
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
60
0
0.1
7th Order
TWOTONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 85 W (PEP), I
DQ
= 900 mA
TwoTone Measurements, Center Frequency = 2645 MHz
5th Order
3rd Order
10
20
30
40
50
1
100
Figure 8. Pulse CW Output Power versus
Input Power
Figure 9. Single-Carrier N-CDMA ACPR, ALT1,
Power Gain and Drain Efficiency versus Output
Power
5
P
out
, OUTPUT POWER (WATTS) AVG. WCDMA
45
35
30
10
10
100
20
40
56
31
P
in
, INPUT POWER (dBm)
54
52
50
46
32
34
33
36
35
39
37
55
51
53
49
38
30
0
20
5
45
P
out
, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
V
DD
= 28 Vdc, I
DQ
= 900 mA
f = 2645 MHz
10
17.5
15
10
5
2.5
40
30
25
20
15
10
Figure 11. Power Gain versus Output Power
P
out
, OUTPUT POWER (WATTS) CW
V
DD
= 12 V
ACPR
η
D
,
p
,
I
A
η
D
,
D
η
D
G
p
,
11
16
1
100
13
12
10
15
14
I
DQ
= 900 mA
f = 2645 MHz
P
o
,
G
p
,
48
47
η
D
100
32 V
Actual
Ideal
P1dB = 51 dBm (126.74 W)
P3dB = 51.72 dBm (148.54 W)
40
25
15
V
DD
= 28 Vdc, I
DQ
= 900 mA, f = 2645 MHz
SingleCarrier NCDMA, 1.2288 MHz
Channel Bandwidth, Peak/Avg. = 9.8 dB
@ 0.01% Probability (CCDF)
ALT1
12.5
7.5
35
28 V
24 V
20 V
16 V
G
ps
G
ps
V
DD
= 28 Vdc, I
DQ
= 900 mA
Pulsed CW, 8
μ
sec(on), 1 msec(off)
Center Frequency = 2645 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6S9045N | RF Power Field Effect Transistors |
| MRF6S9045 | RF Power Field Effect Transistors |
| MRF6S9045MBR1 | RF Power Field Effect Transistors |
| MRF6S9045MR1 | RF Power Field Effect Transistors |
| MRF6S9045NR1 | RF Power Field Effect Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S27085HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27085HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27085HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27085HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S27085HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。