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參數(shù)資料
| 型號： | MRF6S27085HR3 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | N-Channel Enhancement-Mode Lateral MOSFETs |
| 中文描述： | N溝道增強型MOSFET的外側(cè) |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 358K |
| 代理商： | MRF6S27085HR3 |
MRF6S27085HR3 MRF6S27085HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
I
A
2700
2600
IRL
ACPR
ALT1
f, FREQUENCY (MHz)
10
12
14
16
18
20
22
24
26
2660
2640
2620
13.6
15.2
15
14.8
14.6
14.2
14
13.8
48
38
36
34
36
40
44
η
D
,
E
η
D
G
p
,
14.4
2610
2630
2650
2670 2680
32
2690
32
I
A
2700
2600
IRL
ACPR
ALT1
10
12
14
16
18
20
22
24
26
V
DD
= 28 Vdc, P
out
= 20 W (Avg.)
I
DQ
= 900 mA, SingleCarrier NCDMA
2660
2640
2620
14.6
16.2
58
25
24
23
46
50
54
100
12
18
1
I
DQ
= 1340 mA
1240 mA
V
DD
= 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoTone Measurements
2.5 MHz Tone Spacing
900 mA
16
15
13
10
20
0.1
100
30
40
60
50
η
D
,
E
G
p
,
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two-Tone Power Gain versus
Output Power
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
G
p
,
I
I
2610
2630
2650
2670 2680
22
17
14
440 mA
I
DQ
= 440 mA
1340 mA
900 mA
1240 mA
675 mA
2690
42
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance @ 20 Watts Avg.
Figure 4. Single-Carrier N-CDMA Broadband Performance @ 45 Watts Avg.
G
ps
675 mA
1
10
V
DD
= 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
TwoTone Measurements
2.5 MHz Tone Spacing
16
15.8
15.6
15.4
15.2
15
14.8
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01%
Probability (CCDF)
η
D
G
ps
V
DD
= 28 Vdc, P
out
= 45 W (Avg.)
I
DQ
= 900 mA, SingleCarrier NCDMA
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01%
Probability (CCDF)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MRF6S27085HR3_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF6S27085HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF6S27085HR5 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6S27085HS | 制造商:Freescale Semiconductor 功能描述: |
| MRF6S27085HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6 2700MHZ NCDMA NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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