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參數資料
| 型號： | MRF641 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | RF POWER TRANSISTOR NPN SILICON |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 103K |
| 代理商： | MRF641 |
MRF641
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
30
70
150
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
40
60
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 15 W, f = 470 MHz)
Gpe
7.8
8.5
—
dB
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 15 W, f = 470 MHz)
η
55
60
—
%
Output Mismatch Stress
(VCC = 16 Vdc, Pin = 3.0 W, f = 470 MHz,
VSWR =
20:1, All Phase Angles)
ψ
No Degradation in Output Power
Figure 1. Test Circuit Schematic
Z1 — 1.225
″
x 0.187
″
Microstrip
Z2 — 0.884
″
x 0.187
″
Microstrip
Z3 — Capacitor Block (Base)
Z4 — Collector Block
Z5 — 1.1
″
x 0.187
″
Microstrip
Z6 — 0.433
″
x 0.187
″
Microstrip
Z7 — 0.4
″
x 0.187
″
Microstrip
Dotted Area — Capacitor Assembly
C1, C2 — 0.8–10 pF Johanson
C3, C4 — 24 pF Chip Caps 100 mils ATC
C5, C6 — 22 pF Chip Caps 100 mils ATC
C12 — 220 pF Chip Cap 100 mils ATC
C7, C11 — 1.0
μ
F Tantalum 35 Vdc
C9, C10 — 680 pF Feedthrough Allen–Bradley
C13 — 200 pF UNELCO
C8 — 0.1
μ
F, 50 V Erie Red Cap
RFC1 — VK 200 — 104B Ferrite Choke
L1 — 4 Turns 0.2
″
Dia. #16 AWG
L2 — 9 Turns 0.15
″
Dia. #16 AWG
Bead — Ferroxcube 56–590–65–35EB
*C5, C6, are mounted as close to the capacitor
*
assembly as possible.
C3, C4 are mounted in the capacitor assembly.
Board — 62.5 mil Glass Teflon,
ε
r = 2.55.
PARTS
NOTES
RF INPUT
RF OUTPUT
BEAD
RFC1
VCC12.5 V
C10
C9
+
–
C7
C8
C11
+
–
C13
L2
C1
C3
C4
C5
C6
C2
C12
Z7
Z6
Z5
Z4
Z3
Z2
Z1
*
*
L1
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