參數(shù)資料
型號： MRF5S9150HR3
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁數(shù)： 8/12頁
文件大小： 462K
代理商： MRF5S9150HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF5S9150HR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
-23
-3
-8
-13
-28
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
920
840
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout = 33 Watts Avg.
890
880
870
860
850
-65
32
28
24
-40
-50
-55
η
D
,DRAIN
EFFICIENCY
(%)
ηD
-60
-45
26
30
20
19.6
18.8
18
17.2
16
16.8
17.6
18.4
19.2
ALT1
16.4
VDD = 28 Vdc, Pout = 33 W (Avg.)
IDQ = 1500 mA, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
900
910
-18
-23
-8
-13
-18
-28
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
ACPR
(dBc),
AL
T1
(dBc)
920
840
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout = 66 Watts Avg.
890
880
870
860
850
-60
43
39
35
-35
-45
-50
η
D
,DRAIN
EFFICIENCY
(%)
ηD
-55
-40
37
41
19.5
19
18
17
16
14.5
15.5
16.5
17.5
18.5
ALT1
15
VDD = 28 Vdc, Pout = 66 W (Avg.)
IDQ = 1500 mA, N-CDMA IS-95
(Pilot, Sync, Paging, Traffic Codes
8 Through 13)
900
910
-3
Figure 5. Two-T one Power Gain versus
Output Power
100
16
22
1
IDQ = 2250 mA
1875 mA
Pout, OUTPUT POWER (WATTS) PEP
20
18
10
400
G
ps
,POWER
GAIN
(dB)
750 mA
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
21
19
17
1500 mA
1125 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
100
-70
-10
1
IDQ = 750 mA
1875 mA
Pout, OUTPUT POWER (WATTS) PEP
-30
-50
10
400
VDD = 28 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two-Tone Measurements
-20
-40
-60
1500 mA
2250 mA
1125 mA
INTERMODULA
TION
DIST
OR
TION
(dBc)
IMD,
THIRD
ORDER
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