參數(shù)資料
型號(hào): MRF5S9150HR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 462K
代理商: MRF5S9150HR3
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
2
RF Device Data
Freescale Semiconductor
MRF5S9150HR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 600 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
VGS(Q)
3
4
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3.15 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
3.1
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
91.5
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 33 W Avg. N-CDMA,
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±750 kHz
Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
18.5
19.7
21.5
dB
Drain Efficiency
ηD
26.5
28.4
%
Adjacent Channel Power Ratio
ACPR
- 46.8
-45
dBc
Input Return Loss
IRL
-20
-9
dB
1. Part internally input matched.
相關(guān)PDF資料
PDF描述
MRF6P21190HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6P23190HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6P27160HR6 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6P3300HR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF6P9220HR3 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5S9150HR3_09 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5S9150HR5 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9150HSR3 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5S9150HSR5 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF6.3 制造商:Ferraz Shawmut 功能描述: