- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98038 > MRF5S9150HR3 (FREESCALE SEMICONDUCTOR INC) UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MRF5S9150HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 462K |
| 代理商： | MRF5S9150HR3 |
AR
C
HIVE
INF
O
RMA
TI
O
N
ARCHIVE
INFORMA
TION
MRF5S9150HR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for N-CDMA base station applications with frequencies from 869
to 960 MHz. Suitable for multicarrier amplifier applications.
Typical Single-Carrier N-CDMA Performance @ 880 MHz: VDD = 28 Volts,
IDQ = 1500 mA, Pout = 33 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 19.7 dB
Drain Efficiency — 28.4%
ACPR @ 750 kHz Offset — -46.8 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 150 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 VDD Operation
Integrated ESD Protection
Lower Thermal Resistance Package
Low Gold Plating Thickness on Leads, 40μ″ Nominal.
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80
°C, 150 W CW
Case Temperature 76
°C, 33 W CW
RθJC
0.34
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
III (Minimum)
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF5S9150H-1
Rev. 2, 12/2009
Freescale Semiconductor
Technical Data
880 MHz, 33 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFET
MRF5S9150HR3
CASE 465-06, STYLE 1
NI-780
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MRF6P21190HR6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6P23190HR6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6P27160HR6 | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6P3300HR3 | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MRF6P9220HR3 | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF5S9150HR3_09 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MRF5S9150HR5 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HSR3 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF5S9150HSR5 | 功能描述:射頻MOSFET電源晶體管 HV5 900MHZ 150W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF6.3 | 制造商:Ferraz Shawmut 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。