參數(shù)資料
型號(hào): MRF5S9080NR1
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270
封裝: ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN
文件頁數(shù): 17/20頁
文件大?。?/td> 755K
代理商: MRF5S9080NR1
6
RF Device Data
Freescale Semiconductor
MRF5S9080NR1 MRF5S9080NBR1
TYPICAL CHARACTERISTICS - 900 MHz
G
ps
,POWER
GAIN
(dB)
1000
1
0
70
Gps
TC = 30_C
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
25
_C
85
_C
25
_C
85
_C
100
10
60
50
40
30
20
10
14
21
20
19
18
17
16
15
980
0
6
900
Pout = 53 W Avg.
f, FREQUENCY (MHz)
Figure 8. EVM versus Frequency
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
VDD = 28 Vdc
IDQ = 550 mA
13 W Avg.
3 W Avg.
5
4
3
2
1
910
920
930
940
950
960
970
ηD
100
0
1
0
EVM
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. EVM and Drain Efficiency versus
Output Power
EVM,
ERROR
VECT
OR
MAGNITUDE
(%
rms)
TC = 85_C
25
_C
30
_C
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
EDGE Modulation
8
80
6
60
4
40
20
2
10
980
90
50
900
SR @ 400 kHz
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
SPECTRAL
REGROWTH
@
400
kHz
and
600
kHz
(dBc)
VDD = 28 Vdc
IDQ = 550 mA
f = 940 MHz
EDGE Modulation
60
70
80
910
920
930
940
950
960
970
Pout = 53 W Avg.
13 W Avg.
3 W Avg.
η
D
,DRAIN
EFFICIENCY
(%)
η
D
,DRAIN
EFFICIENCY
(%)
ηD
30
_C
100
80
45
0
TC = 85_C
Pout, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth @ 400 kHz
versus Output Power
SPECTRAL
REGROWTH
@
400
kHz
(dBc)
25
_C
30
_C
55
65
75
20
40
80
100
85
55
0
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth @ 600 kHz
versus Output Power
SPECTRAL
REGROWTH
@
600
kHz
(dBc)
65
75
80
20
40
60
80
50
60
70
60
70
60
TC = 85_C
25
_C
30
_C
55
65
75
85
SR @ 600 kHz
53 W Avg.
13 W Avg.
3 W Avg.
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
EDGE Modulation
VDD = 26 Vdc
IDQ = 600 mA
f = 940 MHz
EDGE Modulation
相關(guān)PDF資料
PDF描述
MRF5S9080NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272
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