參數(shù)資料
型號(hào)： MRF5P20180HR6
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF Power Field Effect Transistor
中文描述： RF功率場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 3/12頁(yè)
文件大?。?/td> 365K
代理商： MRF5P20180HR6
MRF5P20180HR6
3
RF Device Data
Freescale Semiconductor
Z11, Z12
Z13, Z14
Z15, Z16
Z17, Z18
Z19, Z20
Z21, Z22
Z25
PCB
0.341
″
x 0.945
″
Microstrip
0.035
″
x 0.913
″
Microstrip
0.581
″
x 0.823
″
Microstrip
0.059
″
x 1.057
″
Microstrip
0.081
″
x 0.046
″
Microstrip
0.081
″
x 0.126
″
Microstrip
0.081
″
x 0.793
″
Microstrip
Taconic TLX8-0300, 0.030
″
,
ε
r
= 2.55
Figure 1. MRF5P20180HR6 Test Circuit Schematic
Z1
Z2
Z3
Z4
Z5, Z24
Z6, Z23
Z7, Z8
Z9, Z10
0.081
″
x 1.126
″
Microstrip
0.079
″
x 0.138
″
Microstrip
0.081
″
x 0.091
″
Microstrip
0.081
″
x 0.117
″
Microstrip
0.134
″
x 0.874
″
Microstrip
0.081
″
x 2.269
″
Microstrip
0.081
″
x 0.118
″
Microstrip
0.081
″
x 0.079
″
Microstrip
R1
R2
+
C14
C10
C8
Z13
Z1
Z3
RF
INPUT
C2
Z7
Z9
C3
Z8
Z10
Z12
Z14
Z17
Z18
C6
C12
C17
+
C20
+
C16
V
SUPPLY
C7
C13
C19
+
C21
+
C18
V
SUPPLY
C4
Z15
Z19
Z21
C5
Z16
Z20
Z22
Z24
Z25
RF
OUTPUT
DUT
V
BIAS
Z23
Z11
Z4
Z5
Z6
C1
Z2
R3
R4
+
C15
C11
V
BIAS
C9
+
+
Table 5. MRF5P20180HR6 Test Circuit Component Designations and Values
Part
C1
1.8 pF 100B Chip Capacitor
C2, C3, C4, C5, C6, C7
10 pF 100B Chip Capacitors
C8, C9
6.8 pF 100B Chip Capacitors
C10, C11, C12, C13
10 nF 200B Chip Capacitors
C14, C15, C16, C17, C18, C19
22
μ
F, 35 V Tantalum Capacitors
C20, C21
220
μ
F, 63 V Electrolytic Capacitors
R1, R2, R3, R4
10 k Chip Resistors (1206)
Description
Part Number
100B1R8BW
100B100GW
100B6R8CW
200B103MW
TAJE226M035
13668221
Manufacturer
ATC
ATC
ATC
ATC
AVX
Philips
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF5P20180HR6_06 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF5P20180R6 制造商:MOTOROLA 制造商全稱(chēng):Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTOR
MRF5P21045NR1 功能描述:射頻MOSFET電源晶體管 HV5 2170MHZ 10W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF5P21180 制造商:FREESCALE 制造商全稱(chēng):Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF5P21180HR5 功能描述:射頻MOSFET電源晶體管 HV5 38W WCDMA NI1230H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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